Epitaxial growth process
Epitaxial growth is the process used to grow a thin crystalline layer on a crystalline surface (substrate).
The substrate wafer acts as seed crystal.
In this process , crystal is grown below melting point , which uses an evaporation method.
There are three techniques used in Epitaxial process :
- Chemical vapour Deposition (CVD)
- Molecular Beam Epitaxy (MBE)
- Liquid Phase Epitaxy (LPE)
Epitaxial processes are used to add varying proportions of donor or acceptor impurities as per requirement.
Four silicon sources are used for growing Epitaxial silicon :
- Silicon tetrachloride
- Silane
- Di-chlorosilane
- Tri-chlorosilane
Types of impurities added are Diborane and Phosphine.
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