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Epitaxial growth process




IC Fabrication

  • Epitaxial growth is the process used to grow a thin crystalline layer on a crystalline surface (substrate).

  • The substrate wafer acts as seed crystal.

  • In this process , crystal is grown below melting point , which uses an evaporation method.

  • There are three techniques used in Epitaxial process :
    • Chemical vapour Deposition (CVD)

    • Molecular Beam Epitaxy (MBE)

    • Liquid Phase Epitaxy (LPE)


  • Epitaxial processes are used to add varying proportions of donor or acceptor impurities as per requirement.

  • Four silicon sources are used for growing Epitaxial silicon :
    • Silicon tetrachloride

    • Silane

    • Di-chlorosilane

    • Tri-chlorosilane


  • Types of impurities added are Diborane and Phosphine.







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